| 参数 |
数值 |
| Frequency (GHz) |
0.7-2.5 |
| Typ. IP 1 dB (dBm) |
28 |
| Typ. IIP3 (dBm) |
45 |
| Description (Absorptive/ Reflective) |
SPST (A) |
| Typ. IL (dB) |
0.7-1.2 |
| Typ. Isol. (dB) |
45-38 |
| Package (mm) |
MSOP 8L, 4.9 x 3 x 0.96 |
The AS165-59 SPST IC FET switch is absorptive on the input. The switch features high isolation and low insertion loss. Ideal building block for base station applications where synthesizer isolation is critical. Use in conjunction with the AS164-80 SPDT switch to meet GSM synthesizer switch isolation requirements.
AS165-59, AS165-59LF: GaAs IC High-Isolation SPST Switch Positive Control 0.7-2.5 GHz
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